Thermoelectric properties of nanostructured porous-polysilicon thin films

In this paper, we address the optimization of electrical and thermoelectrical properties nanostructured polysilicon material for integration in thermoelectric (TE) devices. particular, describe an original method to build a superficial porous (POpSi) thin film on Silicon substrate. This latter is electrically isolated from conductive substrate by SiO2 interlayer Van der Pauw electric home-made measurements. From characterization data, demonstrate that nanostructuration brought porosification layers (polySi) breaks their thermal conductivity factor about 30 has no detrimental impact Seebeck coefficient: POpSi with up 62% porosity experimental value 260 µV/K when standard polysilicon, it built from, n type carrier density 3.4 × 1019/cm3. On other hand, benefit reduction clearly over-compensates degradation measured layers: terms figure merit ZT, 25-fold increase layer 44% seen compared polySi (it increases 0.004 0.1). Such novel viable candidate planar devices using technologies. effort, discuss optimum into TE microgenerator (µTEG) suspended membranes supported simulated conversion efficiency increased 28% µTEG integrating counterpart.